中文摘要：

铜互连与低-k介质在集成电路制造中的应用对表面平坦化提出更高的要求。为改善铜层化学机械抛光（Cu—CMP）效果，将聚苯乙烯（PS）颗粒应用于铜的化学机械抛光液，分析PS颗粒抛光液中氧化剂、络合剂、pH值、粒径及颗粒含量对铜的化学机械抛光性能的影响，并通过静态腐蚀及电化学手段对Ps颗粒在抛光液中的化学作用进行了分析。实验结果表明，当以过氧化氢（H2O2）为氧化剂，氨基乙酸（C2H5NO2）为络合剂时，优化后的PS颗粒抛光液取得了较高的铜抛光去除速率，达到1μm／min，同时发现PS颗粒的加入增强了抛光液的化学腐蚀作用。

英文摘要：

The application of copper and low - k materials in the manufacture of integrate circuit （ IC ） creates more challenges in the surface planarization（CMP） process. In order to improve the planarization efficiency of Cu - CMP, the polystyrene （PS） organic particles were utilized as abrasive in the slurry. The influence of oxidant, complex reagent, pH, diameter and the concentration of abrasive on Cu - CMP, and the chemical effects of PS particles in the slurry were analyzed via static erosion and electrochemistry approaches. The results show that when PS particles are used as abrasive, H2O2 and glycine are used as oxidant and complex reagent respectively, a large copper removal rate of 1 μm/min can be achieved. The appearance of PS particles in the slurry enhances the chemical corrosion effect on copper surface.