为了降低单管半导体激光器的结温、提高器件的散热效果,基于C-mount热沉的热特性分析提出了一种优化的台阶热沉结构,研究了单管激光器结温和腔面侧向温度分布曲线的影响。在热沉温度298 K和连续输出功率10 W的条件下,腔长为1.5 mm的典型C-mount封装结构激光器的结温为343.6 K,热阻为4.6 K/W。通过在典型C-mount热沉中引入台阶结构,使封装激光器的结温降低为333.8 K,热阻减小到3.5 K/W。计算表明,其输出功率可提高近20%。
In order to reduce single-tube laser diode junction temperature and improve heat dissipation effects of the device,an optimized step sink structure was come up based on the thermal characteristic analysis of C-mount heat sink. The distribution of junction temperature and the lateral temperature of single-tube lasers were investigated. Under the conditions of the heat sink temperature of298 K and continuous output power of 10 W,the junction temperature of typical C-mount heat sink package structure with 1. 5 mm cavity length and 3 μm solder thickness is 343. 6 K,and the thermal resistance is 4. 6 K/W. By introducing level heat sink structure,the junction temperature of singletube laser diode is 333. 8 K and thermal resistance is 3. 5 K/W. Theoretical calculation shows that the output power can be improved nearly 20%.