中文摘要：

研制了石墨烯掺杂Cs2CO3（Cs2CO3：Graphene）作为高效电子注入层、结构为ITO/N,N′-bis-（1-naphthyl）-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine（NPB）（50nm）/tris-（8-hydroxy quinoline）-aluminum Alq3（80nm）/Cs2CO3：Graphene（mss 20%1nm）/Al（120nm）的OLEDs。将其与标准器件ITO/NPB（50nm）/Alq3（80nm）/LiF（0.5nm）/Al（120nm）作性能比较,研究石墨烯掺杂在Cs2CO3中作为电子注入层对OLEDs性能的影响。结果表明,基于Cs2CO3：Graphene结构作为电子注入层的器件效率要高于LiF作为电子注入层的器件,其最大电流效率达到2.02cd/A,是标准器件的2.59倍;亮度也高于LiF作为电子注入层的器件,在10V时达到最大值7 690cd/m2,是标准器件最大亮度的2.07倍。性能得到提高的主要机理是由于Cs2CO3：Graphene的引入提高了电子注入效率。

英文摘要：

Highly efficient orgallic light-emitting diodes （OLEDs） are fabricated with a novel efficient e- lectron injection layer consisting of Csz CO3 ： graphene. The structure of devices is ITO/N, N＇-bis-（1- naphthyl）-N, N＇-diphenyl- 1, l＇-biphenyl-4,4＇-diamine （NPB） （50 nm） / tris- （8-hydroxy quinoline）-alu- minum Alq3 （80 nm）/CszCOa ：Graphene （20 wt.%1 nm）/Al（120 nm）. The test results are compared with the standard device consisting of ITO/NPB（50 nm）/Alqs （80 nm）/LiF（0. 5 nm）/Al（120 nm）,and the effect of Csz COs ：graphene as electron injection layer on the OLEDs properties is studied. The re- sults show that the efficiency of the device based on Csz COa ：graphene as an efficient electron injection layer is higher than that based on LiF as electron injection layer. The maximum current efficiency of the device reaches 2.02 cd/A at 9.5 V,which is 2.59 times of that of standard device;the maximum lumi- nance of this device reaches 7 690 cd/m2 at 12 V, which is 2.07 times of that of standai＇d device. The performance of device with an electron injection layer consisting of Csz CO3 ： graphene is improved, and the main reason is that it can enhance the electron electron injection.