欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
temperature effects on the growth and electrical properties of Er2O3 films on Ge substrates
期刊名称:Thin solid Films
时间:0
页码:164-168
语言:英文
相关项目:在硅衬底上Er2O3、Tm2O3高k介质材料的外延生长和物理特性研究
作者:
Z.M. Jiang|T.X. Nie|J. Cui|Z.Y. Zhong|Z.B. Fang|X.J. Yang|Y.L. Fan|T. Ji|
同期刊论文项目
在硅衬底上Er2O3、Tm2O3高k介质材料的外延生长和物理特性研究
期刊论文 9
会议论文 9
同项目期刊论文
Hall resistivity of Fe doped Si film at low temperatures
Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer
Transport properties of a Fe(0.04)Si(0.96) film at low temperatures
Amorphous SiO(x) nanowires catalyzed by metallic Ge for optoelectronic applications
Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular b
Single crystalline Tm(2)O(3) films grown on Si (0 0 1) by atomic oxygen assisted molecular beam epit
Group-IV-diluted magnetic semiconductor Fe(x)Si(1-x) thin films grown by molecular beam epitaxy
Hole transport in one-dimensional aligned GeSi quantum dots at low temperatures