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Hole transport in one-dimensional aligned GeSi quantum dots at low temperatures
  • ISSN号：0022-3727
  • 期刊名称：Journal of Physics D-Applied Physics
  • 时间：0
  • 页码：1-5
  • 语言：英文
  • 相关项目：在硅衬底上Er2O3、Tm2O3高k介质材料的外延生长和物理特性研究
作者： Fan, Y. L.|Zhang, H. Y.|Jiang, Z. M.|Zhang, B.|Lu, F.|Zhong, Z. Y.|Yuan, H.|
同期刊论文项目
在硅衬底上Er2O3、Tm2O3高k介质材料的外延生长和物理特性研究
期刊论文 9 会议论文 9
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