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Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial NiSi2-y
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2011.8
  • 页码：1029-1031
  • 相关项目：超薄可控金属硅化物的形成工艺及机理研究
作者： Li, Junfeng|Chen, Dapeng|Hultman, Lars|Zhang, Shi-Li|
同期刊论文项目
超薄可控金属硅化物的形成工艺及机理研究
期刊论文 22 会议论文 4
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