采用磁控溅射的方法在Si基片上制备了La0.5Sr0.5MnO3-δ/Fe异质结构,并对结构的输运特性进行了分析,表明该异质结构在整个测量的温度区间内呈现半导体特性。激光辐照导致样品电阻减小,并产生瞬态光电导效应,即随着激光的关闭电阻瞬间恢复到原值。分析认为该异质结的瞬态光电导效应与La0.5Sr0.5MnO3-δ层的氧缺陷有关。
The La0.5Sr0.5MnO3-δ/Fe heterostructure is deposited on Si (100) substrate by the magnetron sputtering method. The results about the heterostructure in current perpendicular-to-plane geometry are reported. The sample exhibits the semiconductor-type conduction as the temperature is increased. The irradiation of the laser induces the transient photoconductivity effect. These can be attributed to the disordered characteristic due to the oxygen deficiency in the film and the interface between the Fe and La0.5Sr0.5MnO3-δ.