中文摘要：

使用超声分散CVD法合成的商用单壁碳纳米管（SWCNT）,利用匀胶机把分散获得的、含有SWCNT的悬浮液均匀旋涂于SiO2/Si基上,利用萌罩式电子束蒸发技术在碳纳米管随机网络薄膜表面制备漏源Au电极。该制备技术避免了碳纳米管器件更多的化学接触,有效确保碳纳米管的纯度。该碳纳米管场效应晶体管器件采用重掺杂Si作为背栅、SWCNT随机网络薄膜为导电沟道。在室温环境下利用Keithley-4200对器件性能进行了测试分析,器件开启电流约为1μA,峰值跨导为326nS。该方法制备的SWCNT随机网络场效应晶体管,具有工艺实现简单、器件性能稳定、重复性和一致性好等特点,并可以用于构建CNT逻辑电路。该技术对于研究低成本、大规模基于CNT的集成电路来说,具有较高的借鉴价值。

英文摘要：

The commercial single-walled carbon nanotubes （SWCNTs） were fabricated by ultrasonic dispersion CVD methods. The suspending liquid with SWCNTs was spin-coated on SiO2/Si substrates, and the Au electrodes were deposited on the SWCNTs random networks thin films by shadow mask electron beam evaporation. More chemistry contact with the SWCNTs could be avoided by using the shadow mask electron beam evaporation technology, and the purity of the SWCNTs was ensured effectively. The SWCNTs random networks field effect transistors were achieved by using heavily doped Si-substrate as the back gate, and the SWCNTs random networks thin films were used as the conduction channel. The electricity performance of the CNT-FET devices was tested by Keithley-4200 at room temperature. The test result shows that the turn-on current is about 1 μA and the peak transconductance is 326 nS. The results indicate that the quality features of the SWCNTs-random network-FETs include the simple fabrication process,performance stabilization, good repeatability and uniformity. The technique can be used for achieving logic circuits in CNTs, and provides a good reference for researching low-cost and large-scale ICs based on CNTs.