中文摘要：

国内首次利用固源分子束外延（MBE）技术，在衬底温度为1100℃时，以Si（111）为衬底成功地外延生长出了3C-SiC单晶薄膜。通过x射线衍射（XRD）、拉曼光谱（Raman）以及原位反射高能电子衍射（RHEED）等手段研究了外延薄膜的晶型、结晶质量、外延膜与衬底的外延取向关系，并考察了薄膜制备过程中衬底的碳化对薄膜质量的影响。结果表明，外延膜与衬底晶格取向完全一致；碳化可以减小SiC和衬底Si之间的晶格失配、释放应力、引入成核中心，有利于薄膜单晶质量的提高；碳化温度存在最佳值，这一现象与成核过程有关。

英文摘要：

Monocrystalline 3C,-SiC films were successfully grown on Si（ 111 ） substrates at an optimized subbstrate temperature of 1100℃ by molecular beam epitaxy（MBE） using solid-sources of C and Si for the first time in China.The fdms, the epitaxial orientation,and the rehfions between the fdms and sustrates were characterized by in-situ reflection high energy electron diffraction （RHEED）, X-my diffraction （XRD） and Raman spectra. The effect of substrate carbonization on growth of SiC was studied. The results show that the films are 3C- SiC with all cubic axes parallel to the substrates＇. The carbonization benefits the quality of films because it can compensate the large lattice-mismatch and introduce more nucleation centers of SiC microcrystal.