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嵌入式P端口SRAM的端口间故障测试
  • 期刊名称:计算机辅助设计与图形学学报.2011,23(3)
  • 时间:0
  • 分类:TN402[电子电信—微电子学与固体电子学]
  • 作者机构:[1]南京航空航天大学自动化学院,南京210016
  • 相关基金:国家自然科学基金(90505013,60871009),南京航空航天大学专项科研基金(NS2010063).
  • 相关项目:芯片级自修复数字系统体系结构与自愈机制研究
中文摘要:

为了有效地测试嵌入式P端口静态随机存取存储器(SRAM)端口间的故障,提高电子系统的安全性,提出一种基于结构故障模型的故障测试算法.首先对MarchC算法扩展得到w~r算法,即让一个端口执行MarchC算法的同时另一个端口于偏移量为±2的地址并行执行伪读操作,并考虑存储器的规则结构给出了其简化算法;然后提出ww算法,通过2个端口向存储器单元并行写(不同的地址),可有效地激发2个写端口之间的各种故障,使之适用于不同物理布局的存储器,在保证时间复杂度合理的前提下提高了端口问的故障覆盖率.将故障注入64×8位的双端口SRAM中进行仿真实验,得出了故障检测表,验证r其时间复杂度低,表明文中算法具有100%的端口间故障覆盖率.

英文摘要:

In order to detect inter-port faults in multi port SRAM, this paper proposes a novel algorithm which is called w-r Algorithm and w-w Algorithm based on structural fault model. First, w r Algorithm is improved from March C Algorithm, its test addrest to the concurrent port should be addr±2 is demonstrated. Then, w-w Algorithm is proposed to detect the faults stimulated by concurrent writing (to different addrest). In a word, it not only can detect traditional faults of single port but also can detect all inter port faults, and it can deal with various SRAM of different line arrangement in the layout. Finally, Based on the experimental results on 64 × 8 bit double port SRAM, we conclude that it has 100% fault coverage with low time complexity.

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