中文摘要：

随着IGBT芯片越来越薄和电流增益越来越低，电流集中效应在IGBT短路关断过程中变得更显著，尤其是在自夹挤模式下。为了提高IGBT短路关断过程中的坚固性，文章通过对称的多元胞电热耦合仿真的方式研究了IGBT主要的器件参数对IGBT在短路关断过程中，尤其是在自夹挤模式下的坚固性的影响。结果显示，有更高掺杂、更宽的漂移区、更低的饱和电流密度和更宽的元胞尺寸可以实现更高的短路关断坚固性；而且，存在使得短路关断坚固性最高的电流增益最优值。

英文摘要：

As the chip thickness of IGBT becomes thinner and the current gain becomes lower, the current crowding effect becomes more pronounced during short-circuit turn-off, especially in the self-clamping mode （SCM）. To further improve the ruggedness of IGBT during short-circuit turn-off, it focused on studying the influences of the major device parameters on the ruggedness of IGBT during shortcircuit turn-off, especially in the SCM via symmetrical multicell electrothermal simulations. The results show that wider drift region combined with higher doping concentration, lower saturation current and larger cell pitch can achieve higher ruggedness during shortcircuit turn-off. Besides, as the current gain increases, there exists the optimum value at which the ruggedness of IGBT during short-circuit turn-off is the highest.