中文摘要：

为了有效监测IGBT的工作结温,通过机理分析提出了一种基于电压对电流变化率的结温在线监测方法。首先基于半导体物理论述了IGBT饱和压降UCE与电流ICE的关系,得到了UCE、ICE与结温的对应关系,然后分析了结温对d UCE/d ICE的影响机理,进一步得到d UCE/d ICE随结温的变化规律,且所得规律不受电压、电流绝对值以及负载的影响。实验结果表明：在IGBT饱和工作区内随着结温的升高,d UCE/d ICE呈正比例增大,d UCE/d ICE与结温之间表现出良好的线性唯一对应关系,UCE在电流不变的条件下与结温也呈线性关系,并进一步得到了完整的UCE、ICE与结温的3维关系曲线,验证了机理分析。因此可通过监测d UCE/d ICE的值来有效表征IGBT的实时结温,该方法不受负载影响,更易实现。

英文摘要：

To monitor the IGBT junction temperature effectively, an online junction temperature monitoring method based on derivative of voltage to current was presented through mechanism analysis. The relationship between saturation volt- age UCE and current ICE was first described based on semiconductor physics, and the relationship among UCE, ICE, and junction temperature 73 was obtained. The influence mechanism of junction temperature on dUCE/d/CE was further ana- lyzed and the variation law between dUCE/d/CE and Tj was presented, which was independent of the absolute values of voltage, current and loading. Experimental results show that, in the saturation region, dUCE/CE increases with tempera- ture and shows a good linear relation with 73. UCE also increases linearly with the temperature under constant current, and a complete 3D curve of UCE, ICE, and Tj is further presented. The results prove the analysis and a new junction temperature monitoring method based on the value of dUCE/d/CE is finally supplied, which is easier to achieve in applications.