中文摘要：

采用H2^16O／H2^18O接续氧化并结合同位素示踪方法，研究了铜薄膜在水汽中氧化的传质机理．将真空热蒸发制备的铜薄膜样品，分别在H2^160，H2^16O中以及H2^16O／H2^18O接续进行氧化处理；利用X射线衍射（XRD）研究了氧化产物的形态和结构；并用二次离子质谱仪（SIMS）研究了同位素^19O与^16O在氧化膜中的浓度分布．结果表明铜在水蒸汽中湿法氧化产物为Cu2O，微观氧化传质机理为短路扩散机理．

英文摘要：

vapor using structure of analysed by oxidation is paper, a new method is proposed to investigate the transport mechanism of copper thin film oxidation in water H^162O/H^182O isotopic labeling. Copper thin films are prepared on glass substrates by vacuum deposition. The copper oxide film is analysed by X-ray diffraction （XRD）. The distributions of^16O and^18O in the oxide film are secondary ion mass spectroscopy （ SIMS）. The results demonstrate that the transport mechanism of copper film short-circuit diffusion mechanism.