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Realization of forming-free ZnO-based resistive switching memory by controlling film thickness
  • ISSN号：0022-3727
  • 期刊名称：Journal of Physics D: Applied Physics
  • 时间：2010.10.10
  • 页码：-
  • 相关项目：金属氧化物ReRAM的稳定性和可靠性研究
作者： Mao, Qinan|Ji, Zhenguo|Xi, Junhua|
同期刊论文项目
金属氧化物ReRAM的稳定性和可靠性研究
期刊论文 21 会议论文 7 专利 9 著作 1
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