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硅基Ⅳ族材料红外光子学探测器件的基础研究
  • 项目名称：硅基Ⅳ族材料红外光子学探测器件的基础研究
  • 项目类别：面上项目
  • 批准号：61177038
  • 项目来源：国家自然科学基金
  • 研究期限：1900-01-01-1900-01-01
  • 项目负责人：薛春来
  • 依托单位：中国科学院半导体研究所
  • 批准年度：2011
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期刊论文
Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum w
Growth of Ge1？xSnx/Ge strained-layer superlattices on Si(1 0 0) by molecular beam
High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector
High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnecti
Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temp
Impact of ammonia on the electrical properties of p-type Si nanowire arrays
Comparative studies of band structures for biaxial (100)-, (110)-, and (111)strained GeSn: A first-p
Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy
Influence of growth and annealing temperature on the strain and surface morphology of Ge995Sn0.005 e
Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substra
Enhanced photoluminescence from porous silicon nanowire arrays
Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect
Ag-assisted lateral etching of Si nanowires and its application to nanowire transfer
Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared
GeSn合金的晶格常数对Vegard定律的偏离
掺杂对多层Ge／Si（001）量子点光致发光的影响
Ge（001）衬底上分子束外延生长高质量的Ge1-x Snx合金
基于Franz—Keldysh效应的倏逝波锗硅电吸收调制器设计
Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser
Ge-on-Si for Si-based integrated materials and photonic devices
Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature
薛春来的项目
硅基Ⅳ族合金材料能带调控机制与双异质结激光器的构建
Si/Ge长波长单光子探测器基础研究
期刊论文 32 专利 2
硅基锗锡多量子阱材料制备及发光特性研究