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基于Franz—Keldysh效应的倏逝波锗硅电吸收调制器设计
  • ISSN号：1000-3290
  • 期刊名称：《物理学报》
  • 时间：0
  • 分类：TN929.11[电子电信—通信与信息系统;电子电信—信息与通信工程]
  • 作者机构：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083
  • 相关基金：国家自然科学基金（批准号：61036003,61176013,60906035,61177038）和国家高技术研究发展计划（批准号：2011AA010302）资助的课题.
作者： 李亚明[1], 刘智[1], 薛春来[1], 李传波[1], 成步文[1], 王启明[1]
关键词： 锗硅, 调制器, 电光集成, GeSi, modulator, electro-optical integration
中文摘要：

本文设计了一种基于Franz—Keldy，sh（FK）效应的GeSi电吸收调制器．调制器集成了脊形硅单模波导．光由脊形硅波导以倏逝波形式耦合进锗硅吸收层．在硅基锗二极管FK效应实验测试的基础上，有源区调制层锗硅中的硅组分设计为1．19％，从而使得器件工作在C（1528-1560nm）波段．模拟结果显示该调制器的3dB带宽可达64GHz，消光比为8．8dB，而插损仅为2．7dB．

英文摘要：

We present a novel GeSi electro-absorption （EA） modulator design on a silicon-on-insulator platform. The GeSi EA modulator is constructed based on the Franz-Keldysh （FK） effect. The light is evanescent-coupled into the GeSi absorption layer from the rib Si waveguide. A contnet of 1.19% Si in SiGe absorption layer is chosen for C （1528-1560 nm） band operation. Simulation shows a high （3 dB） bandwidth of - 64 GHz and extinction ratio of 8.8 dB. Especially the insertion loss is as low as 2.7 dB.

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期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 被引量:49876