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Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 分类：TN304.23[电子电信—物理电子学] TN818.06[电子电信—信息与通信工程]
  • 作者机构：[1]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 相关基金：Project supported by the National Basic Research Program of China （Grant No. 2013CB632103）, the National Natural Science Foundation of China （Grant Nos. 61036003, 61176013, and 61177038）, and the High Technology Research and Development Program of China （Grant No. 2011AA010302）.
作者： 何超[1], 刘智[1], 张旭[1], 黄文奇[1], 薛春来[1], 成步文[1]
关键词： 直接带隙, 拉伸应变, 室温, 超高真空化学气相沉积, 硅锗, SI(001), 发光二极管, 多量子阱, Ge, multiple quantum wells, tensile strain, electroluminescence
中文摘要：

Tensile-strained Ge/SiGe multiple quantum wells(MQWs) were grown on a Ge-on-Si virtual substrate using ultrahigh vacuum chemical vapor deposition on an n+-Si(001) substrate. Direct-bandgap electroluminescence from the MQWs light emitting diode was observed at room temperature. The quantum confinement effect of the direct-bandgap transitions is in good agreement with the theoretical calculated results. The redshift mechanism of emission wavelength related to the thermal effect is discussed.

英文摘要：

Tensile-strained Ge/SiGe multiple quantum wells （MQWs） were grown on a Ge-on-Si virtual substrate using ultrahigh vacuum chemical vapor deposition on an n＋-Si （001） substrate. Direct-bandgap electroluminescence from the MQWs light emitting diode was observed at room temperature. The quantum confinement effect of the direct-bandgap transitions is in good agreement with the theoretical calculated results. The redshift mechanism of emission wavelength related to the thermal effect is discussed,

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
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  • 被引量:406