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中文摘要：
Ge1-x Snx是一种新型IV族合金材料，在光子学和微电子学器件研制中具有重要应用前景．本文使用低温分子束外延（MBE）法，在Ge（001）衬底上生长高质量的Ge1-xSnx合金，组分X分别为1．5％，2．4％，2．8％，5．3％和14％，采用高分辨x射线衍射（HR—XRD）、卢瑟福背散射谱（RBS）和透射电子显微镜（TEM）等方法表征Ge1-xSnx合金的材料质量．对于低Sn组分（x≤5.3％）的样品，Ge1-x Snx合金的晶体质量非常好，RBS的沟道／随机产额比（Zmi。）只有5．0％，HR．XRD曲线中Ge1-x Snx衍射峰的半高全宽（FWHM）仅100″左右．对于X=14％的样品，Ge1-x Snx合金的晶体质量相对差一些，FWHM=264．6″．
英文摘要：
As a new group-IV semiconductor alloy, Ge1-xSnx is a very promising material for applications in photonic and microelectronic devices. In this work, high-quality germanium-tin （Ge1-xSnx） alloys are grown on Ge（001） substrates by molecular beam epitaxy, with x = 1.5%, 2.4%, 2.8%, 5.3%, and 14%. The Ge1-xSnx alloys are characterized by high resolution X-ray diffraction （HR-XRD）, Rutherford backscattering spectra （RBS）, and transmission electron micrograph （TEM）. For the samples with Sn composition x ≤ 5.3%, the Ge1-xSnx alloys each exhibit a very high crystalline quality. The ratio of channel yield to random yield （χmin） in the RBS spectrum is only about 5%, and the full width at half maximum （FWHM） of the Ge1-xSnx peak in HR-XRD curve is 100＂. For the sample with x = 14%, the crystalline quality of the alloy is degraded and FWHM is 264.6＂.
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