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中文摘要：
这份报纸在 Ge-on-Si 的 photonic 设备申请考察最近的进步。因为有 Si 互补 metal-oxide-semiconductor (互补金属氧化物半导体) 的成熟取向附生的技术和相容性， Ge-on-Si 材料和光设备是基于 Si 的 optoelectronic 集成的合适的候选人技术。最近，电泵的 Ge 的现实点亮射出二极管(带)并且光泵的脉搏 Ge 激光， Ge 量井调节的人基于量空限制效果，波导 Ge 调节的人基于 Franz-Keldysh ( FK )效果，和高效在红外线附近的 Ge 察觉者，用 Ge photonic 设备显示了 基于Si 的 optoelectronic 集成。Ge-on-Si 材料也是一个重要平台为 Sibased optoelectronic 集成在它上种另外的材料。InGaAs 和 GeSn 在 Ge-on-Si 上被种了。带的 InGaAs 和 GeSn 光电探测器成功地也被制作了。
英文摘要：
This paper reviews the recent progress in photonic devices application of Ge-on-Si. Ge-on-Si materials and optical devices are suitable candidates for Si-based optoelectronic integration because of the mature epitaxial technique and the compatibility with Si complementary metal-oxide-semiconductor （CMOS） technology. Recently, the realities of electric-pump Ge light emitting diode （LED） and optical-pump pulse Ge laser, Ge quantum well modulator based on quantum Stark confined effect, waveguide Ge modulator based on Franz-Keldysh （FK） effect, and high performance near-infrared Ge detector, rendered the Si-based optoelectronic integration using Ge photonic devices. Ge-on-Si material is also an important platform to grow other materials on it for Si- based optoelectronic integration. InGaAs and GeSn have been grown on the Ge-on-Si. InGaAs LED and GeSn photodetector have been successfully fabricated as well.
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