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中文摘要：
在Si （001）衬底上, 以高质量的弛豫Ge薄膜作为缓冲层, 先后生长Sn组分x分别为2.5%, 5.2%和7.8%的完全应变的三层Ge1-xSnx合金薄膜. 在Si （001）衬底上直接生长了X分别为0.005, 0.016, 0.044, 0.070和0.155的五个弛豫Ge1-xSnx样品. 通过卢瑟福背散射谱、高分辨X射线衍射和X射线倒易空间图等方法测量了Ge1-xSnx合金的组分 与晶格常数. 实验得到的晶格常数相对Vegard定律具有较大的正偏离, 弯曲系数b=0.211 A^°.
英文摘要：
Three layers of fully-strained Ge1-xSnx alloys with x=0.025, 0.052, and 0.078 from bottom to up are grown on a Si （001） substrate using a high-quality, strain-relaxed Ge thin film as buffer layer. Five relaxed Ge1-xSnx samples （x=0.005, 0.016, 0.044, 0.070, and 0.155） are grown directly on Si （001） substrates as well. The compositions and lattice constants of the Ge1-xSnx alloys are measured by Rutherford backscattering spectra, high-resolution X-ray diffractions, and X-ray reciprocal space mapping. The experimental results reveal a quite large positive deviation from Vegard＇s law with a bowing parameter b=0.211 A^°.
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