位置：成果数据库 > 会议 > 会议详情页
Bandgap engineering and HfAlO deposition control for trapping layer
  • 所属机构名称：中国科学院微电子研究所
  • 会议名称：2013 China Semiconductor Technology International Conference
  • 时间：2013.3.18
  • 成果类型：会议
  • 相关项目：面向三维集成的纳米尺度电荷陷阱存储器机理与可靠性研究
作者： Guoxing Chen|Yulong Han|Baohe Yang|Ming liu|
同会议论文项目
面向三维集成的纳米尺度电荷陷阱存储器机理与可靠性研究
期刊论文 24 会议论文 15
同项目会议论文
Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-situ E
An simple approach to evaluate TID response in high voltage MOSFET for 65nm flash technology
Investigation of charge loss mechanisms in 3D TANOS cylindricai junction-less charge trapping memory
Reducing Formation Time of the Inversion Layer by Illumination around a Memory Capacitor
TOTAL IONIZING DOSE EFFECT INVESTIGATED BY IN-SITU MEASUREMENTS FOR A 65NM FLASH TECHNOLOGY
High Performance MAHAHOS Memory Devices--Charge Trapping and Distribution in Bandgap Engineered Stru
High performance MAHAHOS memory devices: Charge trapping and distribution in bandgap engineered stru
Optimized HfO2 Atomic layer depositiion process for high performane Charge Trapping flash memory app
A PAGE BUFFER DESIGN BASED ON STABLE AND AREA-SAVING EMBEDDED SRAM FOR FLASH APPLICATIONS
PROGRAM CHARGE EFFECT ON RANDOM TELEGRAPH NOISE BEHAVIOR IN MULTI-LEVEL FLOATING GATE FLASH MEMORY
MODELING AND ANALIZING OF CHIP LEVEL CIRCUIT DESIGN FOR 3D-STACKABLE NAND FLASH MEMORY
Performance optimization for MANOS by using pre-treatment of plasma oxygenic ions
Investigation on Interface Related Charge Trapping Capability in Bandgap Engineering High-k Based Ch
Improved Performance of Nanocrystal Memory Embedded with Au-Al2O3 Core-shell Nanoparticles