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Novel SOI LDMOS with Alternating Semiconductor and High-K Dielectric Pillars
  • 所属机构名称：南京邮电大学
  • 会议名称：第二十八届南京地区研究生通信年会
  • 时间：2013.12.12
  • 成果类型：会议
  • 相关项目：SOI功率器件横向变厚度耐压新技术的机理、工艺和模型研究
作者： 姚佳飞|郭宇锋|花婷婷|黄示|杨宏|杨慧|
同会议论文项目
SOI功率器件横向变厚度耐压新技术的机理、工艺和模型研究
期刊论文 49 会议论文 25 专利 18
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