位置：成果数据库 > 会议 > 会议详情页
A Novel SOI Lateral Power Device with Gradient Buried Oxide Layer
  • 所属机构名称：南京邮电大学
  • 会议名称：IWJT2014
  • 时间：2014.5.5
  • 成果类型：会议
  • 相关项目：SOI功率器件横向变厚度耐压新技术的机理、工艺和模型研究
作者： Zou Yang|Guo Yufeng|Zhang Changchun|JI Xincun|Xia Xiaojuan|
同会议论文项目
SOI功率器件横向变厚度耐压新技术的机理、工艺和模型研究
期刊论文 49 会议论文 25 专利 18
同项目会议论文
一种新型的横向变厚度射频SOI LDMOS
A fully integrated single photon avalanche diode detector in 130nm CMOS technology
一种具有变漂移区宽度的新型SOI横向高压器件
基于电荷共享效应的横向RESURF器件击穿电压模型
An analytical model of back-gate coupling effects of vertical double gate transistors
Novel SOI Lateral Diffused Metal Oxide Semiconductor with Oxide Pillars and Triangle Trench Field Pl
磁共振式无线能量传输的研究现状
A New Extracted Method for Estimating the Bonding Quality of Metal Bonded Wafers
Double snapback effect in LDMOS based on non-isothermal simulation
Capacitance-Voltage Characteristics of Symmetric Stacked Bonding Structure in 3D Integration
低相位噪声电感电容压控振荡器
一种高集成度可编程分频器
漂移区部分氧化柱体硅LDMOS
P+P-top层SOI D-RESURF LDMOS高压器件新结构
SOI RESURF高压器件横向线性缓变近似耐压模型
A Novel RF SOI LDMOS with a Raised Drift Region
A three dimension analytical model of surface electric field distributions for SOI lateral super jun
Novel SOI LDMOS with Alternating Semiconductor and High-K Dielectric Pillars
Numerical Simulation of Static and Dynamic Operation Performance of SOI VLT LDMOS Considering Electr
A High-Performance Sigma-Delta Modulator in 0.18μm CMOS Technology
Design of a Low-Phase-Noise LC Voltage Controlled Oscillator
Analysis of Si3N4 Passivation effect by Self-Consistent Electro-Thermal-Mechanical Simulation in AlG
理想SOMOS的电容特性
不同垂直双栅MOSFET 阈值电压提取方法的比较