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An analytical model of back-gate coupling effects of vertical double gate transistors
  • 所属机构名称：南京邮电大学
  • 会议名称：Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUR
  • 时间：2013
  • 成果类型：会议
  • 相关项目：SOI功率器件横向变厚度耐压新技术的机理、工艺和模型研究
作者： Yufeng Guo|Fanyu Liu|S. -J. Chang|Jiafei Yao|Sorin Cristoloveanna|
同会议论文项目
SOI功率器件横向变厚度耐压新技术的机理、工艺和模型研究
期刊论文 49 会议论文 25 专利 18
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