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InAs quantum dot lasers grown by gas source molecular beam epitaxy on Ge substrates
  • 所属机构名称：中国科学院上海微系统与信息技术研究所
  • 会议名称：NAMBE Conference,
  • 时间：2013.10.10
  • 成果类型：会议
  • 相关项目：微纳系统材料、制造与器件物理
作者： Q. Gong, X. Q. Gao, K. Wang, Q. B. Liu, C. F|S. M. Wang,|
同会议论文项目
微纳系统材料、制造与器件物理
期刊论文 80 会议论文 27 专利 30
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