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Split Gate Enhanced UMOSFET with Optimized Layout of Trench Surrounding Mesa
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：0
  • 页码：3037-3041
  • 相关项目：铜互连体系ZrxSiy超薄扩散阻挡层的性能与机理研究
作者： Ying Wang, Hai-fan Hu, Wen-li Jiao, Yun-tao Liu|
同期刊论文项目
铜互连体系ZrxSiy超薄扩散阻挡层的性能与机理研究
期刊论文 16 专利 1
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