为了进一步降低器件的导通电阻,提出了一种新型的ACCUFET结构——栅增强功率ACCUFET(GE—ACOUFET)。这种器件同时具有普通ACCUFET和GE—UMOS的优点,而且导通电阻比这两种器件都要低。设计了一个击穿电压约106V,导通电阻为2.18×10^-4Ω·cm2的栅增强型功率ACCUFET器件(GE.ACCUFET)。将这种新型器件与GE—UMOS、普通ACCUFET进行对比,并进一步研究器件的结构参数对器件性能的影响。通过ATLAS仿真软件的建模仿真得到的数据显示,新型器件的导通电阻与GE—UMOS、普通ACCUFET相比,均有大幅度的降低。仿真还得到了器件导通电阻和击穿电压与结构参数H,D,α的函数关系,这对器件的生产制造有一定的指导作用。
To decrease the specific on-resistance of the device, the gate enhanced power ACCUFET (GE-ACCUFET) was proposed. This device has advantages of both conventional ACCUFET and GE-UMOS, and the on-resistance is lower than that of either of them. A GE-ACCUFET device was designed. Its VSD is about 106 V, and RoN is 2. 18 ×10^-4Ω·cm2. The performance of GE-ACCUFET was compared to that of the that of GE-UMOS and ACCUFET, and the parameters of GE-ACCUFET were also studied. The simulation result shows that the on-resistance of the GE-ACCUFET is highly decreased compared to that of the conventional ACCUFET and GE-UMOS. The breakdown voltage (BV) and on-resistance versus the parameters such as H, D and angle α relationship for GE-ACCUFET were achieved, which gives some guidance to manufacture.