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High-Performance Gate-Enhanced Power UMOSFET With Optimized Structure
  • 期刊名称：IEEE Electron Device Letters
  • 时间：0
  • 页码：1281-1283
  • 相关项目：铜互连体系ZrxSiy超薄扩散阻挡层的性能与机理研究
作者： Ying Wang, Hai-fan Hu and Wen-Li Jiao|
同期刊论文项目
铜互连体系ZrxSiy超薄扩散阻挡层的性能与机理研究
期刊论文 16 专利 1
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