中文摘要：

采用直流反应磁控溅射方法在P型（100）Si衬底上制备了Ta-Al—N纳米薄膜与Cu／Ta-Al—N复合膜，并对薄膜样品进行了卤钨灯快速热退火（RTP）。用四探针电阻测试仪（VPP）、AFM、SEM—EDS、Alpha—stepIQ台阶仪和XPd）等分析测试方法对样品的形貌结构与特性进行了分析表征。实验结果表明，本实验条件下制得的Ta-Al—N纳米薄膜表面光滑；随着Al靶溅射功率的增加，Ta-Al—N薄膜中Al含量和方块电阻相应增大，均方根粗糙度降低，而沉积速率变化不大，且Ta-Al—N膜层对Cu扩散的阻挡能力增强。但在过高的温度下退火，导致Cu通过Ta-Al—N的晶界扩散到Ta-Al—N／Si界面并形成Cu3Si，从而引起阻挡层的失效。

英文摘要：

Ta-Al-N nanofilms and Cu/Ta-Al-N multilayer were deposited by DC reactive magnetron sputtering on p-type Si（100） substrates and rapidly thermal processed（RTP） with tungsten halide lamp. The films were characterized with atomic force microscopy（AFM）, scanning electron microscopy energy dispersion spectroscopy（SEM-EDS） and X-ray diffraction（XRD） et al. The results show that the sputtering power on Al target strongly affects the microstructures and properties of the films. For example, as the sputtering power increases, its Al concentration, its sheet resistance and its surface roughness increase, and the Cu diffusion barrier property improves but the deposition rate remains unchanged. If annealed at a higher temperature, Cu may diffused through the grain boundaries of Ta-Al-N films and form Cu3Si, resulting in failure of Ta-Al-N diffusion barrier.