中文摘要：

SiC单晶因其宽的禁带宽度、高的电子饱和速度、大的临界击穿场强、高的热导率和热稳定性等特性而成为制作高频、大功率和耐高温器件的理想材料。综述了SiC材料及器件的研究现状、关键技术和发展趋势;分析了我国的研究现状和存在的差距。

英文摘要：

Silicon carbide（SiC） is a promising material for high power, high frequency, high temperature applications because of its excellent properties such as wide band gap, high saturated electron velocity, high electrical breakdown field, high thermal conductivity, thermal stability and so on. An review of research status, key technologies and developing trends on SiC material and devices are integrated introduced in this paper. Also the current development status and existence gaps in our country are analysised.