中文摘要：

采用热丝CVD法在单晶Si衬底上进行了Si和Ge薄膜的低温外延生长,用XRD和Raman谱对其结构性能进行了分析。结果表明：在衬底温度200℃时,Si（111）单晶衬底上外延生长出了Raman峰位置为521.0cm-1;X射线半峰宽（FWHM）为5.04cm-1。结晶质量非常接近于体单晶的（111）取向的本征Si薄膜;在衬底温度为300℃时,在Si（100）单晶衬底上异质外延,得到了Raman峰位置为300.3cm-1的Ge薄膜,Ge薄膜的晶体取向为Ge（220）。研究表明热丝CVD是一种很好的低温外延薄膜的方法。

英文摘要：

Epitaxial growth of Si and Ge films on c-Si substrate was carried out by hot-wire CVD （HWCVD） at low substrate temperature.XRD and Raman spectroscopy were used to analyze the structural properties of the films.It was found that a high quality homoepitaxial Si film is obtained on Si（111） substrate at 200 ℃.The peak position of the Raman spectrum for the film is at 521.0 cm-1 and the full width at half maximum （FWHM） is 5.04 cm-1,almost the same as those for the Si（111） substrate.Heteroepitaxial Ge film is performed on Si（100） at 300 ℃.The Ge film is Ge（220） preferably orientated and the Raman peak position for this film is at 300.3 cm-1.All results indicate that HWCVD is an excellent method for film epitaxy at low temperature.