中文摘要：

采用射频磁控共溅射法在玻璃衬底上制备出了Al与Sn共掺杂的ZnO（ATZO）薄膜。在固定ZnO：Al（AZO）靶溅射功率不变的条件下，研究了Sn靶溅射功率对ATZO薄膜的结晶质量、表面形貌、电学和光学性能的影响。结果表明，制备的ATZO薄膜是六角纤锌矿结构的多晶薄膜，具有C轴择优取向，而且表面致密均匀。当sn溅射功率为5w时，330am厚度的ATZO薄膜的电阻率最小为1.49× 10^-3Ω·cm，比AZO薄膜下降了22％。ATZO薄膜在400～900am波段的平均透过率为88．92％，禁带宽度约为3．62eV。

英文摘要：

The ZnO films doped with A1 and Sn （ATZO） were deposited by RF magnetmn sputtering on glass sub- strates. The impacts of the growth conditions, including the sputtering power in Sn-doping, contents of AI and Sn, and film thickness, on the microstructures and electro-optical properties were evaluated. The ATZO films were characterized with X- ray diffraction and scanning electron microscopy. The results show that the wurtzite-phased, smooth and compact ATZO film is polycrystalline,with c-axis as the preferential growth orientation of the ZnO grains. The lowest resistivity of the films doped with Sn at a sputtering power of 5 W in the ZnO films pre-doped with Al,was found to be 1.49× 10^-3Ω·cm,22% lower than that of the Al-doped ZnO film. The average transmittance in the range of 400 - 900 nm, and the and-gap of the ATZO films were estimated to be 88.92% and 3.62 eV,respectively.