中文摘要：

通过磁控溅射方法在玻璃衬底上制备Cu2O薄膜,采用X射线衍射（XRD）、分光光度计、原子力显微镜（AFM）和X射线光电子能谱（XPS）等研究了氧气流量对Cu2O薄膜性能的影响。结果表明：氧气流量为4.2 sccm时,薄膜为单相的Cu2O,具有较高的结晶质量和可见光透过率,光学带隙为2.29 eV,薄膜的导电类型是p型且空穴浓度为2×10^16cm^-3。通过XPS能谱分析Cu 2p和O 1s结合能,确定了薄膜中Cu以＋1价存在。

英文摘要：

Cuprous oxide（Cu2O） thin films were deposited on glass substrate by magnetron sputtering method.The influence of oxygen flow rate on the properties of Cu2O thin films was investigated by X-ray diffraction（XRD）,UV-vis spectrophotometer,atomic force microscope（AFM） and X-ray photoelectron spectroscopy（XPS）.The results show that when the oxygen flow rate is at 4.2 sccm,single phase Cu2O films are obtained.These films have high crystalline quality and visible light transmittance.The optical band gap（Eg） of the Cu2O films obtained under the optimized growth condition is 2.29 eV and the films have a hole concentration of 2×10^16 cm^-3,and the conductive type is p-type.The binding energy of Cu 2p3/2 and O 1sconfirmed that the chemical valence of Cu in the sample is ＋1.