中文摘要：

通过提高发射区的方块电阻和优化发射区的磷杂质浓度纵向分布,制备了性能优良的单晶硅太阳电池。I-V测量分析表明：高表面活性磷杂质浓度浅结发射区太阳电池短路电流密度、开路电压和填充因子分别提高了0.32mA/cm2,1.19mV和0.22%,因此转换效率提高了0.22%。内量子效率分析表明：高表面活性磷杂质浓度浅结发射区太阳电池短路电流密度的提高是由于短波光谱响应增强了。SEM分析表明：高表面活性磷杂质浓度浅结发射区太阳电池在发射区硅表面沉积的Ag晶粒分布数量更多、一致性更好,从而更容易收集光生电流传输到Ag栅线,改善了太阳电池的性能。

英文摘要：

High quality mono-crystalline silicon solar cells were fabricated by increasing the sheet-resistance and optimizing the phosphorus longitudinal distribution in the diffused structures of the emitter.The I-V measurement analysis shows that the improvements of 0.32 mA/cm2 in the short-current density,1.19 mV in the open-circuit voltage and 0.22% in the fill factor are achieved,and thus 0.22% higher in the energy conversion efficiency is obtained for solar cells fabricated on the emitter with a higher active phosphorus surface concentration and shallower junction depth.The analysis of the internal quantum efficiency shows that the enhancement of the short-current density is due to the better short wavelength response in the solar cells.The SEM analysis shows more and more uniformly distributed Ag crystallites on the surface of the solar cells with the shallower junction emitter that has higher active phosphorus surface concentration.This leads to the easy collection of the photo-generated current and transmission to the Ag grid lines,thus improving the performances of the solar cells.