中文摘要：

为了考察硅铝界面氧化铝膜对铝诱导多晶硅的影响，本文用磁控溅射方法制备了界面有无氧化铝膜的硅铝复合结构。XRD测试表明两种铝诱导方法均制备了具有（111）高度择优取向的多晶硅薄膜。光学显微镜和扫描电镜照片显示，有氧化铝膜时铝诱导的多晶硅薄膜有两层，下层为大晶粒（40μm-60μm）枝晶状多晶硅，拉曼谱显示其结晶质量接近单晶，而上层膜晶粒较小，结晶质量较差。无氧化铝膜时铝诱导的多晶硅薄膜只有单层结构，其晶体结构和结晶质量都与有氧化铝膜时铝诱导的上层多晶硅薄膜相似。结果表明，硅铝界面上氧化铝的存在大大提高了铝诱导多晶硅薄膜的质量，但是另一方面也限制了铝诱导多晶硅的晶化速率。

英文摘要：

The polycrystalline silicon films were grown by magnetron sputtering on Coming Eagle 2000 glass substrate, and on the glass substrate coated with alumina films, respectively. The microstructures of the poly-silicon films were characterized with X-ray diffraction （XRD）, scanning electron microscopy （SEM）, Raman spectroscopy and optical microscopy. The impact of the alumina coating on the aluminum-induced crystallization of the poly-silicon films was studied. The results show that though the alumina coating limits the crystallization rate, it significantly improves the quality of the poly-Si films. For example,the Al coating results in the formation of a bi-layered films：the poorly crystallized poly-Si layer with small Si grains on top of the dendritic poly-Si layer with large crystalline grains （40um - 60nm）. On the bare glass substrate, only poly-Si films,resembling the top layer of the bi-layered films grown on alumina coated glass substrate, were observed.