中文摘要：

为了缩短铝诱导法制备大晶粒多晶硅薄膜的退火时间,用射频磁控溅射法在玻璃衬底上沉积了a-Si/SiO2/Al叠层膜,并用两种方法进行变温退火.分析了变温退火工艺对铝诱导晶化过程的影响,着重讨论了退火过程中温度由低温升到高温时不形成小晶粒的机理和条件.研究表明,当退火温度升高时,是否形成小晶粒取决于晶粒半径、耗尽层厚度和相邻晶粒间距三者之间的关系.

英文摘要：

In order to shorten processing time for large grain polycrystalline Si thin films prepared by aluminum induced crystallization,the stack of a-Si /SiO2 /Al is deposited by radio frequency magnetron sputtering and annealed at two different irregular temperature profiles.The influence of irregular temperature profile on the processing of amorphous silicon prepared by the aluminum induced crystallization is investigated and the condition is discussed under which whether new nucleation appears when the annealing temperature increases.It turns out that the formation of nucleation is governed by the relationship among the grain radium at low temperature,the distance of depletion region,and the distance of adjacent grains.