中文摘要：

采用浸渍法在硅纳米孔柱阵列（Silicon Nanoporous Pillar Array,Si-NPA）衬底上制得了一系列金/硅纳米孔柱阵列（Au/Si-NPA）,不同Au/Si-NPA所用沉积时间不同。通过测试分析所制Au/Si-NPA的I-V特性曲线,研究了沉积时间对Au/Si-NPA电学特性的影响。结果表明：在沉积时间小于30 min时,Au/Si-NPA的正向电流随沉积时间的延长而减小;而当沉积时间超过30 min时,Au/Si-NPA的正向电流随沉积时间的延长而增大。这种电学特性变化主要是由Au/Si-NPA的表面形貌及成分出现变化引起的。

英文摘要：

A group of Au/silicon nanoporous pillar array（Au/Si-NPA） samples were prepared on silicon nanoporous pillar array（Si-NPA） substrates by immersion method.Different deposition times were used for different Au/Si NPA samples.The effects of deposition time on the electrical characteristics of Au/Si NPA were studied by measuring and comparing the I-V curve of the prepared Au/Si NPA.The results show that the positive current of Au/Si NPA decreases with increasing deposition time when the deposition time is below 30 min,while the positive current of Au/Si NPA shows an opposite trend when the deposition time is above 30 minutes.This change is mainly caused by changes occurring in the surface morphology and composition of Au/Si NPA.