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中文摘要：
在 nanowire 与不同角度和位置描绘的一个新奇谷物边界(GB ) 模型被建立。借助于设备模拟器，有一种卷上的门配置的 ZnO nanowire 联邦货物税(Nanowire 地效果晶体管) 的电的表演上的谷物边界角度和地点的效果，被探索。随谷物边界角度的增加，电的表演逐渐地降级。什么时候有一个更小的角度的一条谷物边界，例如 5 ???? ?????? ????????????????????? ???????? ′？
英文摘要：
A novel grain boundary （GB） model characterized with different angles and positions in the nanowire was set up. By means of device simulator, the effects of grain boundary angle and location on the electrical performance of ZnO nanowire FET （Nanowire Field-Effect Transistor） with a wrap-around gate configuration, were explored. With the increase of the grain boundary angle, the electrical performance degrades gradually. When a grain boundary with a smaller angle, such as 5° GB, is located close to the source or drain electrode, the grain boundary is partially depleted by an electric field peak, which leads to the decrease of electron concentration and the degradation of transistor characteristics. When the 90° GB is located at the center of the nanowire, the action of the electric field is balanced out, so the electrical performance of transistor is better than that of the 90° GB located at the other positions.
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