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中文摘要：
在对单电子晶体管主方程模型及主方程的解法详细的分析的基础上，把单电子晶体管主方程模型和SPICE的ABM功能结合，提出了基于主方程的单电子晶体管SPICE模型。该模型由一个非线性电压控制电流源、非线性电压控制电压源、电容构成。并利用该模型对单电子晶体管V—I特性进行SPICE模拟，同直接解主方程解法相比，仿真结果表明该模型具有合理的精确度。
英文摘要：
Basing on the analysis of master equation model of single electron transistors, we combine master equation model of single electron transistors with SPICE＇ ABM function. A SPICE model of single electron transistors based on the master equation is proposed. It consists of a nonlinear voltage-controlled current source, a nonlinear voltage-controlled voltage source, and capacitance. With the model, the V-I characteristics of single electron transistors are simulated with SPICE. The simulation results show that the model is reasonably precise comparing with the traditional methods.
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