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Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes
  • ISSN号：1862-6351
  • 期刊名称：Physica Status Solidi (c) Current Topics in Solid
  • 时间：0
  • 页码：674-677
  • 相关项目：空间用掺锗硅单晶及器件的微缺陷研究
作者： Chen, Jiahe1, 2|Vanhellemont, Jan3|Simoen, Eddy4|Lauwaert, Johan3|Vrielinck, Henk3|Rafi, Joan Marc5|Ohyama, Hidenori6|Weber, J?rg1|Yang, Deren2|
同期刊论文项目
空间用掺锗硅单晶及器件的微缺陷研究
期刊论文 12 会议论文 5
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Germanium doping for improved silicon substrates and devices
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