位置：成果数据库 > 期刊 > 期刊详情页
High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon
  • ISSN号：0040-6090
  • 期刊名称：Thin Solid Films
  • 时间：0
  • 页码：2334-2337
  • 相关项目：空间用掺锗硅单晶及器件的微缺陷研究
作者： Chen, Jiahe|Ma, Xiangyang|Yang, Deren|
同期刊论文项目
空间用掺锗硅单晶及器件的微缺陷研究
期刊论文 12 会议论文 5
同项目期刊论文
Characterization of a Czochralski grown silicon crystal doped with 10 20 cm-3 germanium
Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes
On the assumed impact of germanium doping on void formation in Czochralski-grown silicon
Effect of vacancies on oxygen precipitation in germanium-doped Czochralski silicon
Improvement in the mechanical performance of Czochralski silicon under indentation by germanium dopi
Germanium doping for improved silicon substrates and devices
重掺硼对直拉单晶硅片上压痕位错运动的影响
应力预释放对单晶硅片的压痕位错滑移的影响
n型补偿直拉单晶硅的电子迁移率