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Characterization of a Czochralski grown silicon crystal doped with 10 20 cm-3 germanium
  • ISSN号：0232-1300
  • 期刊名称：Crystal Research and Technology
  • 时间：0
  • 页码：10-13
  • 相关项目：空间用掺锗硅单晶及器件的微缺陷研究
作者： Xu, Wubing1|Chen, Jiahe1, 2|Ma, Xiangyang1|Yang, Deren1|Gong, Longfei3|Tian, Daxi3|
同期刊论文项目
空间用掺锗硅单晶及器件的微缺陷研究
期刊论文 12 会议论文 5
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