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Improvement in the mechanical performance of Czochralski silicon under indentation by germanium dopi
  • ISSN号：1359-6462
  • 期刊名称：Scripta Materialia
  • 时间：0
  • 页码：832-835
  • 相关项目：空间用掺锗硅单晶及器件的微缺陷研究
作者： Zeng, Zhidan|Wang, Lin|Ma, Xiangyang|Qu, Shaoxing|Chen, Jiahe|Liu, Yonggang|Yang, Deren|
同期刊论文项目
空间用掺锗硅单晶及器件的微缺陷研究
期刊论文 12 会议论文 5
同项目期刊论文
Characterization of a Czochralski grown silicon crystal doped with 10 20 cm-3 germanium
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Effect of vacancies on oxygen precipitation in germanium-doped Czochralski silicon
High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon
Germanium doping for improved silicon substrates and devices
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