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Effect of vacancies on oxygen precipitation in germanium-doped Czochralski silicon
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：073518-
  • 相关项目：空间用掺锗硅单晶及器件的微缺陷研究
作者： Wu, Peng|Chen, Jiahe|Ma, Xiangyang|Yang, Deren|
同期刊论文项目
空间用掺锗硅单晶及器件的微缺陷研究
期刊论文 12 会议论文 5
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High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon
Improvement in the mechanical performance of Czochralski silicon under indentation by germanium dopi
Germanium doping for improved silicon substrates and devices
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