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Germanium doping for improved silicon substrates and devices
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：0
  • 页码：8-15
  • 相关项目：空间用掺锗硅单晶及器件的微缺陷研究
作者： Vanhellemont, J.1|Chen, J.2, 6|Lauwaert, J.1|Vrielinck, H.1|Xu, W.2|Yang, D.2|Raf, J.M.3|Ohyama, H.4|Simoen, E.5|
同期刊论文项目
空间用掺锗硅单晶及器件的微缺陷研究
期刊论文 12 会议论文 5
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Effect of vacancies on oxygen precipitation in germanium-doped Czochralski silicon
High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon
Improvement in the mechanical performance of Czochralski silicon under indentation by germanium dopi
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