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On the assumed impact of germanium doping on void formation in Czochralski-grown silicon
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：123501-
  • 相关项目：空间用掺锗硅单晶及器件的微缺陷研究
作者： Vanhellemont, Jan1|Zhang, Xinpeng1|Xu, Wubing1|Chen, Jiahe1|Ma, Xiangyang1|Yang, Deren1|
同期刊论文项目
空间用掺锗硅单晶及器件的微缺陷研究
期刊论文 12 会议论文 5
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Characterization of a Czochralski grown silicon crystal doped with 10 20 cm-3 germanium
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High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon
Improvement in the mechanical performance of Czochralski silicon under indentation by germanium dopi
Germanium doping for improved silicon substrates and devices
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