中文摘要：

本文采用射频磁控溅射法在ITO／Glass衬底上制备了Cu／HfOx／TiMIM结构，对其电学性能和化学成分进行了分析。结果表明，Cu／HfOx／Ti结构在不发生软击穿（forming）的情况下具有明显的双极电阻转变特性，高低阻比大于10，并且具有良好的重复性与保持性。HfOx薄膜中含有大量的氧空位，电阻转变过程可能与氧空位形成的导电细丝有关。

英文摘要：

The HfOx thin film with resistive switching behaviors was grown on ITO/Glass substrate by Ra- dio frequency - magnetron sputtering method. The electrical properties and chemical composition of the film were analyzed. The results of Electrical tests indicate that Cu/HfOx/Ti show a clearly bi - polar re- sistive switching without a forming process is revealed. The memory also performs great reliability, and the high - resistance to low - resistance ratio is greater than 10. XPS analysis shows that film contains large amounts of oxygen vacancies. Cu is not throughout the whole HfOx thin film. The mechanism of re- sistive switching may be associated with oxygen vacancies.