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The improved resistive switching of HfO2:Cu film with multilevel storage
  • ISSN号：0022-2461
  • 期刊名称：Journal of Materials Science
  • 时间：2015.11.1
  • 页码：7043-7047
  • 相关项目：HfOx基薄膜微观结构缺陷及其电致电阻转变机制研究
作者： Guo Tingting|Tan Tingting|Liu Zhengtang|
同期刊论文项目
HfOx基薄膜微观结构缺陷及其电致电阻转变机制研究
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