中文摘要：

利用等离子体增强化学气相沉积（PECVD）制备硅薄膜,对硅薄膜进行退火处理。通过X射线衍射谱,拉曼光谱以及傅里叶变换红外吸收光谱,研究了退火温度在550~700℃范围内,硅薄膜退火过程中的生长特性。实验表明：多晶硅的晶粒尺寸并不随着退火温度的提高而持续增大,当退火温度在550~650℃范围内,硅薄膜始终表现出（111）方向的择优生长取向。当退火温度高于650℃时,氧原子活性增强,硅-氧键增加。对于存在应变、已结晶的薄膜,由于内部应力的累积,薄膜更容易随着退火温度的升高而脱落。

英文摘要：

Silicon films were deposited by plasma enhanced chemical vapor deposition（ PECVD）,then treated by anneal to prepare the polycrystalline silicon. The characteristic of the growth in the annealing temperature range from 550 ℃ to 700 ℃ were investigated by X-ray diffraction,Raman spectra and FTIR spectroscopy. The results show that the grain size didn’ t increases as the temperature increasing,within the range of set temperature, it always exhibits the（ 111） growth orientation. As the annealing temperature reaches 650 ℃,the activity of the oxygen atoms become more sensitive,the ability of reaction improved,the quantity of Si-O band increasing. For the crystallized film with a strain,the surface of film is more likely to be crack as the annealing temperature increasing,because of the accumulation of internal stress.