中文摘要：

采用溶胶-凝胶旋转涂膜法,以 InCl3·4H 2 O 和 SnCl4·5 H 2 O 为前驱物在玻璃基片上制备了氧化铟锡（ITO）薄膜材料,研究掺锡浓度、涂膜层数、热处理温度和热处理时间等工艺条件对 ITO 薄膜光电特性的影响.实验结果表明,ITO 薄膜的方块电阻和可见光透射率都与掺锡浓度、涂膜层数、热处理温度和时间等因素有关,最佳参数为锡掺杂量12wt%,热处理温度和时间分别为450℃和1 h,薄膜层数为6层.最佳 ITO 薄膜的方块电阻为185Ω/□,可见光平均透射率为91.25%.

英文摘要：

The Sn doped In2 O 3 thin films were prepared on the glass substrates by sol-gel and rotating film method with InCl3 ·4H 2 O and SnCl4 ·5 H 2 O.The effects of blending tin concentration coating layer, heat-treatment temperature and time on the optical and electrical properties of ITO thin films were investigated.The experimental results show that the square resistance and the transmission rate of ITO thin film are related to the blending tin concentration,coating layer,heat-treatment temperature and time. And the best blending tin concentration is 12wt%,heat treatment temperature and time are 450 ℃ and 60 min,the coating layer is 6,respectively.The square resistance of ITO thin film is 185Ω/□and the transmission rate is 91.25%.